The increasing current density in future power semiconductor chips requires an increase in the electrical conductor cross-sectional area within power modules. Electrical connections to the chips are made using a process known as ‘ultrasonic wire bonding’. This manufacturing process was further developed as part of the project ‘High-Performance Bonding in Energy-Efficient Power Semiconductor Modules’ – funded by EFRE.NRW within the Production.NRW lead market competition – in a collaboration between Hesse GmbH (Paderborn), Infineon Technologies AG (Warstein) and the Chair of Dynamics and Mechatronics at Paderborn University as part of the project “High-Performance Bonding in Energy-Efficient Power Semiconductor Modules”, which was funded by EFRE.NRW within the Produktion.NRW lead market competition, between 1 April 2016 and 31 March 2019.

A newly designed vibration system has been developed which, through multidimensional, multi-frequency excitation, provides sufficient ultrasonic power to reliably bond semi-finished copper products with a larger cross-section (up to 3^mm² instead of the previous 0.3^mm²). The required ultrasonic power (up to 300 W) is applied gently and efficiently to the joint without causing any damage. It has also been possible to replace the soldering process when inserting connectors into power semiconductor modules. This will enable the efficiency of power semiconductor modules to be further increased in future, thereby contributing to a more efficient energy supply.